Schottky barrier
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A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable fo
1N5822 Schottky diode with cut-open packaging. The semiconducting silicon (center) makes a Schottky barrier against one of the metal electrodes, and an ohmic contact against the other electrode.
Walter Schottky
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Walter Schottky was a German physicist and electrical engineer who played a major early role in developing the theory of thermionic emission, invented the screen-grid vacuum tube in 1915, co-invented
Schottky barrier
…A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for…
Schottky, c. 1920