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Czochralski method
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The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors, metals, salts and synthetic gemstones. The me
Crystal of Czochralski-grown silicon
Crystal of Czochralski-grown silicon
Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The induction heating coil is visible, and the end of the crystal is just eme
Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The induction heating coil is visible, and the end of the crystal is just emerging from the melt. The technician is measuring the temperature with an optical pyrometer. The crystals produced by this early apparatus, used in an early Si plant, were only one inch in diameter.
A puller rod with seed crystal for growing single-crystal silicon by the Czochralski method
A puller rod with seed crystal for growing single-crystal silicon by the Czochralski method
Crucibles used in Czochralski method
Crucibles used in Czochralski method