The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors, metals, salts and synthetic gemstones. The me
Crystal of Czochralski-grown silicon
Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The induction heating coil is visible, and the end of the crystal is just emerging from the melt. The technician is measuring the temperature with an optical pyrometer. The crystals produced by this early apparatus, used in an early Si plant, were only one inch in diameter.
A puller rod with seed crystal for growing single-crystal silicon by the Czochralski method
Crucibles used in Czochralski method
In electronics, a wafer is a thin slice of semiconductor, such as a crystalline silicon, used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells.
Czochralski method
…as with an applied magnetic field. Due to efficiencies of scale, the semiconductor industry often uses wafers with standardized dimensions, or common wafer specifications. Early on, boules were small, a few centimeters wide. With advanced technology, high-end device manufacturers use 200 mm and 300 mm…
2-inch (51 mm), 4-inch (100 mm), 6-inch (150 mm), and 8-inch (200 mm) wafers