In electronics, the metal–oxide–semiconductor field-effect transistor is a type of field-effect transistor, most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, t
Two power MOSFETs in D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120 V in the off state, and can conduct a continuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.