Dynamic random-access memory
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Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transis
A die photograph of the Micron Technology MT4C1024 DRAM integrated circuit (1994). It has a capacity of 1 megabit equivalent to 220 bits or 128 KiB.
Motherboard of the NeXTcube computer, 1990, with 64 MiB main memory DRAM (top left) and 256 KiB of VRAM (lower edge, right of middle)
A 16 MB EDO DRAM module made by Samsung Electronics
A 512-MBit Qimonda GDDR3 SDRAM package
Memory cell (computing)
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The memory cell is the fundamental building block of computer memory. The memory cell is a device, such as an electronic circuit, that stores one bit of binary information and it must be set to store
Layout for the silicon implementation of a six transistor SRAM memory cell
32x32 core memory plane storing 1024 bits of data
Intel 1103, a 1970 metal-oxide-semiconductor (MOS) dynamic random-access memory (DRAM) chip