Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transis
A die photograph of the Micron Technology MT4C1024 DRAM integrated circuit (1994). It has a capacity of 1 megabit equivalent to 220 bits or 128 KiB.
Motherboard of the NeXTcube computer, 1990, with 64 MiB main memory DRAM (top left) and 256 KiB of VRAM (lower edge, right of middle)
A 16 MB EDO DRAM module made by Samsung Electronics
A 512-MBit Qimonda GDDR3 SDRAM package
Synchronous dynamic random-access memory is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal.
Dynamic random-access memory
…consequences for some U.S. firms. On 4 December 1985 the US Commerce Department's International Trade Administration ruled in favor of the complaint. Synchronous dynamic random-access memory (SDRAM) was developed by Samsung. The first commercial SDRAM chip was the Samsung KM48SL2000, which had a capacity of 16 Mbit, and was introduced in…
SDRAM memory module, enlarged
The 64 MB of sound memory on the Sound Blaster X-Fi Fatality Pro sound card is built from 2 Micron 48LC32M8A2 SDRAM chips. They run at 133 MHz (7.5 ns clock period) and have 8-bit wide data buses.
DIMM: 168 pins and two notches