Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
GaAs wafer of (100) orientation
Triple-junction GaAs cells covering MidSTAR-1
Gallium is a chemical element; it has symbol Ga and atomic number 31. Discovered by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875, gallium is in group 13 of the periodic table and is similar to the other metals of the group.
Gallium
Crystallization of gallium from the melt
99.9999% (6N) gallium sealed in vacuum ampoule
Bauxite mine in Jamaica (1984)