Magnetoresistive RAM
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Magnetoresistive random-access memory is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM
First 200mm 1 Mb MRAM wafer, fabricated by Motorola, 2001
Ferroelectric RAM
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Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is an alternative non-volatil
Magnetoresistive RAM
…memory devices are in production or have been proposed to address these shortcomings. To date, the only similar system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). Also seeing renewed interest are silicon-oxide-nitride-oxide-silicon (SONOS) memory and ReRAM. 3D XPoint…
FeRAM by Ramtron