Shockley diode
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The Shockley diode is a four-layer semiconductor diode. It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley dio
A sculpture representing a Shockley 4-layer diode, on the sidewalk in front of the new building at 391 San Antonio Rd., Mountain View, California, which was the original site of the Shockley Semiconductor Laboratories where the first silicon device work in Silicon Valley was done
Dynistor
Semiconductor
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A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities to its crystal structure. When two region
Silicon crystals are the most common semiconducting materials used in microelectronics and photovoltaics.
Karl Ferdinand Braun developed the crystal detector, the first semiconductor device, in 1874.
John Bardeen, William Shockley and Walter Brattain developed the bipolar point-contact transistor in 1947.
4 fach NAND C10