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X-ray photoelectron spectroscopy
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X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique based on the photoelectric effect that can identify the elements that exist within a material or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to. The technique can be used in line profiling of the elemental composition across the surface, or in depth profiling when paired with ion-beam etching. It is often applied to study chemical processes in the materials in their as-received state or after cleavage, scraping, exposure to heat, reactive gasses or solutions, ultraviolet light, or during ion implantation.
An inside view of an old-type, non-monochromatic XPS system.
An inside view of an old-type, non-monochromatic XPS system.
Example of an X-ray Photoelectron Spectrometer
Example of an X-ray Photoelectron Spectrometer
Wide-scan or survey spectrum of a somewhat dirty silicon wafer, showing all elements present. A survey spectrum is usually the starting point of most
Wide-scan or survey spectrum of a somewhat dirty silicon wafer, showing all elements present. A survey spectrum is usually the starting point of most XPS analyses. It allows one to set up subsequent high-resolution XPS spectra acquisition. The inset shows a quantification table indicating the atomic species, their atomic percentages and characteristic binding energies.
High-resolution spectrum of an oxidized silicon wafer in the energy range of the Si 2p signal. The raw data spectrum (red) is fitted with five compone
High-resolution spectrum of an oxidized silicon wafer in the energy range of the Si 2p signal. The raw data spectrum (red) is fitted with five components or chemical states, A through E. The more oxidized forms of Si (SiOx, x = 1-2) appear at higher binding energies in the broad feature centered at 103.67 eV. The so-called metallic form of silicon, which resides below an upper layer of oxidized silicon, exhibits a set of doublet peaks at 100.30 eV (Si 2
Ion beam
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An ion beam is a type of charged particle beam consisting of ions. Ion beams have many uses in electronics manufacturing and other industries. A variety of ion beam sources exists, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most common ion beams are of singly-charged ions.
A small ion beam rocket being tested by NASA.
A small ion beam rocket being tested by NASA.
Carl Zeiss Crossbeam 550 – combines a field emission scanning electron microscope (FE-SEM) with a focused ion beam (FIB).
Carl Zeiss Crossbeam 550 – combines a field emission scanning electron microscope (FE-SEM) with a focused ion beam (FIB).
Nanofluidics channels fabricated with a Zeiss Crossbeam 550 L, in a silicon master stamp
Nanofluidics channels fabricated with a Zeiss Crossbeam 550 L, in a silicon master stamp