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A diagram of the vertical zone refining process used to grow single-crystal ice from an initially polycrystalline material. The convection in the melt
A diagram of the vertical zone refining process used to grow single-crystal ice from an initially polycrystalline material. The convection in the melt is a result of water's density maximum at 4 °C.
Silicon crystal in the beginning of the growth process
Silicon crystal in the beginning of the growth process
Growing silicon crystal
Growing silicon crystal
A high-purity (5N) tantalum single crystal, made by the floating-zone process (cylindrical object in the center)
A high-purity (5N) tantalum single crystal, made by the floating-zone process (cylindrical object in the center)
Crystal of Czochralski-grown silicon
Crystal of Czochralski-grown silicon
Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The induction heating coil is visible, and the end of the crystal is just eme
Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The induction heating coil is visible, and the end of the crystal is just emerging from the melt. The technician is measuring the temperature with an optical pyrometer. The crystals produced by this early apparatus, used in an early Si plant, were only one inch in diameter.
A puller rod with seed crystal for growing single-crystal silicon by the Czochralski method
A puller rod with seed crystal for growing single-crystal silicon by the Czochralski method
Crucibles used in Czochralski method
Crucibles used in Czochralski method