The entire wiki reimagined as a visual magazine with video discovery · Watch your interests come alive
The entire wiki reimagined as a visual magazine with video discovery · Watch your interests come alive
Typical individual BJT packages. From left to right: SOT-23, TO-92, TO-126, TO-3
Typical individual BJT packages. From left to right: SOT-23, TO-92, TO-126, TO-3
Die of a 2N2222 NPN transistor: the NPN materials are made in layers with the collector at the bottom. Bond wires connect metalization on the base to
Die of a 2N2222 NPN transistor: the NPN materials are made in layers with the collector at the bottom. Bond wires connect metalization on the base to the left lead, and emitter to the right. The collector is connected to the can with a third external lead.
Transistor
Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1925.
Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1925.
John Bardeen, William Shockley, and Walter Brattain at Bell Labs in 1948; Bardeen and Brattain invented the point-contact transistor in 1947 and Shock
John Bardeen, William Shockley, and Walter Brattain at Bell Labs in 1948; Bardeen and Brattain invented the point-contact transistor in 1947 and Shockley invented the bipolar junction transistor in 1948.
A replica of the first working transistor, a point-contact transistor invented in 1947
A replica of the first working transistor, a point-contact transistor invented in 1947