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Typical individual BJT packages. From left to right: SOT-23, TO-92, TO-126, TO-3
Typical individual BJT packages. From left to right: SOT-23, TO-92, TO-126, TO-3
Die of a 2N2222 NPN transistor—bond wires connect to the base and emitter.
Die of a 2N2222 NPN transistor—bond wires connect to the base and emitter.
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Size comparison of bipolar junction transistor packages, including (from left to right): SOT-23, TO-92, TO-126, and TO-3
Size comparison of bipolar junction transistor packages, including (from left to right): SOT-23, TO-92, TO-126, and TO-3
Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1925.
Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1925.
John Bardeen, William Shockley, and Walter Brattain at Bell Labs in 1948; Bardeen and Brattain invented the point-contact transistor in 1947 and Shock
John Bardeen, William Shockley, and Walter Brattain at Bell Labs in 1948; Bardeen and Brattain invented the point-contact transistor in 1947 and Shockley invented the bipolar junction transistor in 1948.
A replica of the first working transistor, a point-contact transistor invented in 1947
A replica of the first working transistor, a point-contact transistor invented in 1947