High Bandwidth Memory
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High Bandwidth Memory is a computer memory interface for 3D-stacked synchronous dynamic random-access memory, initially developed by Samsung, AMD and SK Hynix. It is often used in conjunction with per
HBM DRAM die
HBM memory on an AMD Radeon R9 Nano graphics card's GPU package
HBM2 DRAM die
HBM2 controller die
Dynamic random-access memory
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Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transis
High Bandwidth Memory
…the base die for HBM and is planned to be the foundry for several HBM companies in 2026. HBM has had an unprecedented demand increase, and in general DRAM (DDR4, DDR, and flash memory/NAND) price has in early 2026 "experienced compounded increases, some exceeding 200%, since early 2025 ... [because of…
A die photograph of the Micron Technology MT4C1024 DRAM integrated circuit (1994). It has a capacity of 1 megabit equivalent to 220 bits or 128 KiB.
Motherboard of the NeXTcube computer, 1990, with 64 MiB main memory DRAM (top left) and 256 KiB of VRAM (lower edge, right of middle)
A 16 MB EDO DRAM module made by Samsung Electronics
A 512-MBit Qimonda GDDR3 SDRAM package