An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
IGBT module (IGBTs and freewheeling diodes) with a rated current of 1200 A and a maximum voltage of 3300 V
Cross-section of a typical IGBT showing internal connection of MOSFET and bipolar device
Opened IGBT module with four IGBTs (half of H-bridge) rated for 400 A 600 V
Variable-frequency drive
Videos
A variable-frequency drive is a type of AC motor drive that controls speed and torque by varying the frequency of the input electricity. Depending on its topology, it controls the associated voltage or current variation.
Chassis of above VFD (cover removed)
Electric motor speed-torque chart
Six-step drive waveforms