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Typical structure of a Si/SiGe resonant interband tunneling diode
Typical structure of a Si/SiGe resonant interband tunneling diode
Band diagram of a typical Si/SiGe resonant interband tunneling diode calculated by Gregory Snider's 1D Poisson/Schrödinger Solver.
Band diagram of a typical Si/SiGe resonant interband tunneling diode calculated by Gregory Snider's 1D Poisson/Schrödinger Solver.
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Fluorescent lamp, a device with negative differential resistance. In operation, an increase in current through the fluorescent tube causes a drop in v
Fluorescent lamp, a device with negative differential resistance. In operation, an increase in current through the fluorescent tube causes a drop in voltage across it. If the tube were connected directly to the power line, the falling tube voltage would cause more and more current to flow, causing it to arc flash and destroy itself. To prevent this, fluorescent tubes are connected to the power line through a ballast. The ballast adds positive impedance (AC resistance) to the circuit to counteract the negative resistance of the tube, limiting the current.
A Gunn diode, a semiconductor device with negative differential resistance used in electronic oscillators to generate microwaves
A Gunn diode, a semiconductor device with negative differential resistance used in electronic oscillators to generate microwaves
An oscillator consisting of a Gunn diode inside a cavity resonator. The negative resistance of the diode excites microwave oscillations in the cavity,
An oscillator consisting of a Gunn diode inside a cavity resonator. The negative resistance of the diode excites microwave oscillations in the cavity, which radiate through the aperture into a waveguide (not shown).
8–12 GHz microwave amplifier consisting of two cascaded tunnel diode reflection amplifiers
8–12 GHz microwave amplifier consisting of two cascaded tunnel diode reflection amplifiers